TSM110NB04LDCR RLG

Active

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 10A/48A 8DFN

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 10A/48A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM110NB04LDCR RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	48 A, 10 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1269 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	2 W, 48 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max	Supplier Device Package	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM110NB04DCR RLG	10 A 48 A	2 W 48 W	8-PDFN (5x6)	8-PowerTDFN	Surface Mount	11 mOhm	2 N-Channel (Dual)	4 V	MOSFET (Metal Oxide)	-55 °C	155 °C	40 V	1506 pF	25 nC
Taiwan Semiconductor Corporation TSM110NB04LDCR RLG	10 A 48 A	2 W 48 W	8-PDFN (5x6)	8-PowerTDFN	Surface Mount	11 mOhm	2 N-Channel (Dual)	2.5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	40 V	1269 pF	23 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 10A (Ta), 48A (Tc) 2W (Ta), 48W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources