TSM110NB04DCR RLG

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Taiwan Semiconductor Corporation

TRANS MOSFET N-CH 40V 48A 8-PIN PDFN EP T/R

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Taiwan Semiconductor Corporation

TRANS MOSFET N-CH 40V 48A 8-PIN PDFN EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	TSM110NB04DCR RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	48 A, 10 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1506 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	155 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	2 W, 48 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-PDFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max	Supplier Device Package	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM110NB04DCR RLG	10 A 48 A	2 W 48 W	8-PDFN (5x6)	8-PowerTDFN	Surface Mount	11 mOhm	2 N-Channel (Dual)	4 V	MOSFET (Metal Oxide)	-55 °C	155 °C	40 V	1506 pF	25 nC
Taiwan Semiconductor Corporation TSM110NB04LDCR RLG	10 A 48 A	2 W 48 W	8-PDFN (5x6)	8-PowerTDFN	Surface Mount	11 mOhm	2 N-Channel (Dual)	2.5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	40 V	1269 pF	23 nC

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General part information

Mosfet Array 40V 10A (Ta), 48A (Tc) 2W (Ta), 48W (Tc) Surface Mount 8-PDFN (5x6)

Technical documentation and resources