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TO-247-3

BYC30WT-600PQ

Active
WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-3

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TO-247-3

BYC30WT-600PQ

Active
WeEn Semiconductors

DIODE GEN PURP 600V 30A TO247-3

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Description

General part information

BYC30 Series

Diode 600 V 30A Through Hole TO-247-3

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC30WT-600PQ
Current - Average Rectified (Io)30 A
Current - Reverse Leakage10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Package / CaseTO-247-3
Package NameTO-247-3
Reverse Recovery Time (trr)22 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)2.75 V

Pricing

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