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NXPSC06650Q

BYC30-1200PQ

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WeEn Semiconductors

DIODE GEN PURP 1.2KV 30A TO220AC

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NXPSC06650Q

BYC30-1200PQ

Active
WeEn Semiconductors

DIODE GEN PURP 1.2KV 30A TO220AC

Find alt

Description

General part information

BYC30 Series

Diode 1200 V 30A Through Hole TO-220AC

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC30-1200PQ
Current - Average Rectified (Io)30 A
Current - Reverse Leakage250 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Package / CaseTO-220-2
Package NameTO-220AC
Reverse Recovery Time (trr)65 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)3.3 V

Pricing

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