
BYC30JT-600PSQ
ActiveWeEn Semiconductors
DIODE GEN PURP 600V 30A TO3PF

BYC30JT-600PSQ
ActiveWeEn Semiconductors
DIODE GEN PURP 600V 30A TO3PF
Description
General part information
BYC30 Series
Diode 600 V 30A Through Hole TO-3PF
Technical Specifications
Parameters and characteristics for this part
| Specification | BYC30JT-600PSQ |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-3PFM, SC-93-3 |
| Package Name | TO-3PF |
| Reverse Recovery Time (trr) | 22 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 2.75 V |
Pricing
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