IRS2001PBF

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INFINEON

MOSFET DRIVER DUAL, LOW & HIGH SIDE, 10V-20V SUPPLY, 600MA PEAK OUT, DIP-8

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IRS2001PBF

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INFINEON

MOSFET DRIVER DUAL, LOW & HIGH SIDE, 10V-20V SUPPLY, 600MA PEAK OUT, DIP-8

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS2001 Series

IRS2001PBF is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200V.

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2001PBF

Channel Type	Independent
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	200 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-DIP, 8-PDIP
Package Width	7.62 mm
Rise Time (Typ)	70 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2001 Series

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Input Type	Package Length	Package Name	Package Width	Operating Temperature (Max)	Operating Temperature (Min)	Gate Channel	High Side Voltage - Max (Bootstrap)	Logic Voltage - VIL	Logic Voltage - VIH	Fall Time (Typ)	Rise Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers	Driven Configuration	Channel Type
INFINEON IRS2001PBF-INF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP	7.62 mm	125 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001STRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	Non-Inverting	0.154 in	8-SOIC	3.9 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001SPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	Non-Inverting	0.154 in	8-SOIC	3.9 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

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