IRS2001STRPBF

NRND

EICEDRIVER™ 200 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.29 A SOURCE AND 0.6 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

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IRS2001STRPBF

NRND

INFINEON

EICEDRIVER™ 200 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.29 A SOURCE AND 0.6 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS2001 Series

200 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC and 14 Lead MLPQ 4x4.

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2001STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	200 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	70 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2001 Series

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Input Type	Package Length	Package Name	Package Width	Operating Temperature (Max)	Operating Temperature (Min)	Gate Channel	High Side Voltage - Max (Bootstrap)	Logic Voltage - VIL	Logic Voltage - VIH	Fall Time (Typ)	Rise Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers	Driven Configuration	Channel Type
INFINEON IRS2001PBF-INF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP	7.62 mm	125 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001STRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	Non-Inverting	0.154 in	8-SOIC	3.9 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001SPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	Non-Inverting	0.154 in	8-SOIC	3.9 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Gate driver IC MOSFET - EiceDRIVER™ and CoolMOS™ CFD2 Join for High Efficiency in Refrigeration - Bodos Power

Application Note AN-978 HV Floating MOS-Gate Driver ICs

IRS2001