IRS2001 Series

Manufacturer: INFINEON

Catalog

BUFFER/INVERTER BASED PERIPHERAL

Part	Gate Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Input Type	Package Length	Package Name	Package Width	Operating Temperature (Max)	Operating Temperature (Min)	Gate Channel	High Side Voltage - Max (Bootstrap)	Logic Voltage - VIL	Logic Voltage - VIH	Fall Time (Typ)	Rise Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers	Driven Configuration	Channel Type
INFINEON IRS2001PBF-INF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP	7.62 mm	125 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001STRPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	Non-Inverting	0.154 in	8-SOIC	3.9 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Through Hole	Non-Inverting	0.3 in	8-DIP 8-PDIP	7.62 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001SPBF	IGBT MOSFET N-Channel MOSFET	10 VDC	20 V	Surface Mount	Non-Inverting	0.154 in	8-SOIC	3.9 mm	150 °C	-40 °C	N-Channel	200 V	0.8 V	2.5 V	35 ns	70 ns	600 mA	290 mA	2	Half-Bridge	Independent