IMZA65R050M2HXKSA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 38 A, 650 V, 0.046 OHM, TO-247

Find alt

Alpha

IMZA65R050M2HXKSA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 38 A, 650 V, 0.046 OHM, TO-247

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

650V G2 Series

The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Technical Specifications

Parameters and characteristics for this part

Specification	IMZA65R050M2HXKSA1

Current - Continuous Drain (Id) (Tc)	38 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	790 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	PG-TO247-4-8
Power Dissipation (Max)	153 W
Rds On (Max)	46 mOhm
Technology	SiCFET (Silicon Carbide), SiC (Silicon Carbide Junction Transistor)
Vgs (Max) Negative	-7 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5.6 V

650V G2 Series

Part	Power Dissipation (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Rds On (Max)	Gate Charge (Max)	Mounting Type	Vgs (Max) Positive	Vgs (Max) Negative	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package Leads
INFINEON IMZA65R050M2HXKSA1	153 W	PG-TO247-4-8	-55 °C	175 °C	790 pF	650 V	N-Channel	20 V	15 V	TO-247-4	46 mOhm	22 nC	Through Hole	23 V	-7 V	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	38 A	5.6 V
INFINEON IMBG65R060M2HXTMA1	148 W	D2PAK PG-TO263-7-12	-55 °C	175 °C	669 pF	650 V	N-Channel	20 V	15 V		55 mOhm	18 nC	Surface Mount	23 V	-7 V	SiCFET (Silicon Carbide)	34.9 A	5.6 V	7 Leads
INFINEON IMBG65R010M2HXTMA1	535 W	D2PAK PG-TO263-7-12	-55 °C	175 °C	4001 pF	650 V	N-Channel	20 V	15 V		9.1 mOhm	112 nC	Surface Mount	23 V	-7 V	SiCFET (Silicon Carbide)	158 A	5.6 V	7 Leads
INFINEON IMTA65R060M2HXTMA1	165 W		-55 °C	175 °C	669 pF	650 V	N-Channel	20 V	15 V		55 mOhm	18 nC		25 V	-10 V	SiCFET (Silicon Carbide)	37 A	5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IMZA65R050M2HXKSA1 | Datasheet

Datasheet