650V G2 Series

Manufacturer: INFINEON

Catalog

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 38 A, 650 V, 0.046 OHM, TO-247

Part	Power Dissipation (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Rds On (Max)	Gate Charge (Max)	Mounting Type	Vgs (Max) Positive	Vgs (Max) Negative	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package Leads
INFINEON IMZA65R050M2HXKSA1	153 W	PG-TO247-4-8	-55 °C	175 °C	790 pF	650 V	N-Channel	20 V	15 V	TO-247-4	46 mOhm	22 nC	Through Hole	23 V	-7 V	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	38 A	5.6 V
INFINEON IMBG65R060M2HXTMA1	148 W	D2PAK PG-TO263-7-12	-55 °C	175 °C	669 pF	650 V	N-Channel	20 V	15 V		55 mOhm	18 nC	Surface Mount	23 V	-7 V	SiCFET (Silicon Carbide)	34.9 A	5.6 V	7 Leads
INFINEON IMBG65R010M2HXTMA1	535 W	D2PAK PG-TO263-7-12	-55 °C	175 °C	4001 pF	650 V	N-Channel	20 V	15 V		9.1 mOhm	112 nC	Surface Mount	23 V	-7 V	SiCFET (Silicon Carbide)	158 A	5.6 V	7 Leads
INFINEON IMTA65R060M2HXTMA1	165 W		-55 °C	175 °C	669 pF	650 V	N-Channel	20 V	15 V		55 mOhm	18 nC		25 V	-10 V	SiCFET (Silicon Carbide)	37 A	5.6 V