IMTA65R060M2HXTMA1

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INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 37 A, 650 V, 0.055 OHM, LHSOF

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IMTA65R060M2HXTMA1

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INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 37 A, 650 V, 0.055 OHM, LHSOF

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Description Specifications Series Pricing CAD Documents

Description

General part information

650V G2 Series

The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.

Technical Specifications

Parameters and characteristics for this part

Specification	IMTA65R060M2HXTMA1

Current - Continuous Drain (Id) (Tc)	37 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	669 pF
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Power Dissipation (Max)	165 W
Rds On (Max)	55 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	5.6 V

650V G2 Series

Part	Power Dissipation (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Rds On (Max)	Gate Charge (Max)	Mounting Type	Vgs (Max) Positive	Vgs (Max) Negative	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package Leads
INFINEON IMZA65R050M2HXKSA1	153 W	PG-TO247-4-8	-55 °C	175 °C	790 pF	650 V	N-Channel	20 V	15 V	TO-247-4	46 mOhm	22 nC	Through Hole	23 V	-7 V	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	38 A	5.6 V
INFINEON IMBG65R060M2HXTMA1	148 W	D2PAK PG-TO263-7-12	-55 °C	175 °C	669 pF	650 V	N-Channel	20 V	15 V		55 mOhm	18 nC	Surface Mount	23 V	-7 V	SiCFET (Silicon Carbide)	34.9 A	5.6 V	7 Leads
INFINEON IMBG65R010M2HXTMA1	535 W	D2PAK PG-TO263-7-12	-55 °C	175 °C	4001 pF	650 V	N-Channel	20 V	15 V		9.1 mOhm	112 nC	Surface Mount	23 V	-7 V	SiCFET (Silicon Carbide)	158 A	5.6 V	7 Leads
INFINEON IMTA65R060M2HXTMA1	165 W		-55 °C	175 °C	669 pF	650 V	N-Channel	20 V	15 V		55 mOhm	18 nC		25 V	-10 V	SiCFET (Silicon Carbide)	37 A	5.6 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IMTA65R060M2HXTMA1 | Datasheet