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IPU80R1K0CEBKMA1 - Infineon Technologies AG-IPU50R3K0CEBKMA1 MOSFETs Trans MOSFET N-CH 500V 1.7A 3-Pin(3+Tab) TO-251 Tube

IPU80R1K0CEBKMA1

Unknown
Infineon Technologies

TRANS MOSFET N-CH 800V 5.7A 3-PIN(3+TAB) TO-251 TUBE

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IPU80R1K0CEBKMA1 - Infineon Technologies AG-IPU50R3K0CEBKMA1 MOSFETs Trans MOSFET N-CH 500V 1.7A 3-Pin(3+Tab) TO-251 Tube

IPU80R1K0CEBKMA1

Unknown
Infineon Technologies

TRANS MOSFET N-CH 800V 5.7A 3-PIN(3+TAB) TO-251 TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPU80R1K0CEBKMA1
Current - Continuous Drain (Id) @ 25°C5.7 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds785 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)83 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackagePG-TO251-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPU80R Series

N-Channel 800 V 5.7A (Tc) 83W (Tc) Through Hole PG-TO251-3

Documents

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