IPU80R Series

Catalog

MOSFET N-CH 800V 3.9A TO251-3

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPU80R1K4CEBKMA1	10 V	PG-TO251-3	N-Channel	3.9 A	1.4 Ohm	Through Hole	23 nC	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.9 V	570 pF	800 V	MOSFET (Metal Oxide)	63 W	-55 °C	150 °C
Infineon Technologies IPU80R1K0CEBKMA1	10 V	PG-TO251-3	N-Channel	5.7 A		Through Hole	31 nC	20 V	IPAK TO-251-3 Short Leads TO-251AA	3.9 V	785 pF	800 V	MOSFET (Metal Oxide)	83 W	-55 °C	150 °C	950 mOhm
Infineon Technologies IPU80R2K8CEBKMA1	10 V	PG-TO251-3	N-Channel	1.9 A		Through Hole		20 V	IPAK TO-251-3 Short Leads TO-251AA	3.9 V	290 pF	800 V	MOSFET (Metal Oxide)	42 W	-55 °C	150 °C	2.8 Ohm	12 nC