
IPU80R2K8CEBKMA1
UnknownInfineon Technologies
MOSFET N-CH 800V 1.9A TO251-3
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IPU80R2K8CEBKMA1
UnknownInfineon Technologies
MOSFET N-CH 800V 1.9A TO251-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPU80R2K8CEBKMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.9 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 42 W |
| Rds On (Max) @ Id, Vgs | 2.8 Ohm |
| Supplier Device Package | PG-TO251-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPU80R Series
N-Channel 800 V 1.9A (Tc) 42W (Tc) Through Hole PG-TO251-3
Documents
Technical documentation and resources