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IPU80R2K8CEBKMA1 - PG-TO251-3

IPU80R2K8CEBKMA1

Unknown
Infineon Technologies

MOSFET N-CH 800V 1.9A TO251-3

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IPU80R2K8CEBKMA1 - PG-TO251-3

IPU80R2K8CEBKMA1

Unknown
Infineon Technologies

MOSFET N-CH 800V 1.9A TO251-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPU80R2K8CEBKMA1
Current - Continuous Drain (Id) @ 25°C1.9 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds290 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)42 W
Rds On (Max) @ Id, Vgs2.8 Ohm
Supplier Device PackagePG-TO251-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPU80R Series

N-Channel 800 V 1.9A (Tc) 42W (Tc) Through Hole PG-TO251-3

Documents

Technical documentation and resources