Specification	TSM4NC50CP ROG

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	453 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252 (DPAK)
Power Dissipation (Max)	83 W
Rds On (Max)	2.7 Ohm, 2.7 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

TSM4 Series

Part	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Gate Charge (Max)	Technology	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case
Taiwan Semiconductor Corporation TSM4NC50CP ROG	500 V	N-Channel	-55 °C	150 °C	Surface Mount	20 V	10 V	83 W	TO-252 (DPAK)	4 A	3 V	12 nC	MOSFET (Metal Oxide)	453 pF	2.7 Ohm 2.7 Ohm	DPAK (2 Leads + Tab) SC-63 TO-252-3
Taiwan Semiconductor Corporation TSM4ND65CI	650 V	N-Channel	-55 °C	150 °C	Through Hole	30 V	10 V	41.6 W	ITO-220	4 A	3.8 V	16.8 nC	MOSFET (Metal Oxide)	596 pF	2.6 Ohm	Isolated Tab TO-220-3 Full Pack

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