TSM4ND65CI

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Taiwan Semiconductor Corporation

MOSFET N-CH 650V 4A ITO220

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Taiwan Semiconductor Corporation

MOSFET N-CH 650V 4A ITO220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4ND65CI

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.8 nC
Input Capacitance (Ciss) (Max) @ Vds	596 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	41.6 W
Rds On (Max) @ Id, Vgs [Max]	2.6 Ohm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Taiwan Semiconductor Corporation TSM4ND65CI	30 V	650 V	-55 °C	150 °C	3.8 V	ITO-220	TO-220-3 Full Pack Isolated Tab	10 V	4 A	Through Hole	16.8 nC	MOSFET (Metal Oxide)	596 pF	N-Channel	41.6 W	2.6 Ohm

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General part information

N-Channel 650 V 4A (Tc) 41.6W (Tc) Through Hole ITO-220

Technical documentation and resources

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