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MOSFET N-CH 650V 4A ITO220
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 30 V | 650 V | -55 °C | 150 °C | 3.8 V | ITO-220 | TO-220-3 Full Pack Isolated Tab | 10 V | 4 A | Through Hole | 16.8 nC | MOSFET (Metal Oxide) | 596 pF | N-Channel | 41.6 W | 2.6 Ohm |