Specification	STB6N62K3

Current - Continuous Drain (Id) (Tc)	5.5 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Input Capacitance (Ciss) (Max)	875 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	90 W
Rds On (Max)	1.2 Ohm, 1.2 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

STB6N Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case	FET Type	Mounting Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Power Dissipation (Max)	Package Name	Operating Temperature
STMicroelectronics STB6NM60N	25 V	600 V	MOSFET (Metal Oxide)	13 nC	-55 °C	150 °C	420 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	4.6 A	920 mOhm	10 V	4 V	45 W	D2PAK
STMicroelectronics STB6N62K3	30 V	620 V	MOSFET (Metal Oxide)	34 nC			875 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	5.5 A	1.2 Ohm 1.2 Ohm	10 V	4.5 V	90 W	TO-263 (D2PAK)	150 °C
STMicroelectronics STB6N65M2	25 V	650 V	MOSFET (Metal Oxide)	9.8 nC	-55 °C	150 °C	226 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	Surface Mount	4 A	1.35 Ohm	10 V	4 V	60 W	TO-263 (D2PAK)

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