MOSFET N-CH 600V 4.6A D2PAK
| Part | FET Type | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | N-Channel | 600 V | 25 V | Surface Mount | 10 V | 13 nC | D2PAK | 4.6 A | 4 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 920 mOhm | 45 W | 420 pF | |||
STMicroelectronics | N-Channel | 620 V | 30 V | Surface Mount | 10 V | TO-263 (D2PAK) | 5.5 A | 4.5 V | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1.2 Ohm | 90 W | 875 pF | 34 nC | 150 °C | ||||
STMicroelectronics | N-Channel | 650 V | 25 V | Surface Mount | 10 V | TO-263 (D2PAK) | 4 A | 4 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 60 W | 226 pF | 9.8 nC | 1.35 Ohm |