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STB6N65M2 - D²PAK

STB6N65M2

Obsolete
STMicroelectronics

MOSFET N-CH 650V 4A D2PAK

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STB6N65M2 - D²PAK

STB6N65M2

Obsolete
STMicroelectronics

MOSFET N-CH 650V 4A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB6N65M2
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.8 nC
Input Capacitance (Ciss) (Max) @ Vds226 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs [Max]1.35 Ohm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

STB6N Series

N-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources