IR2112PBF

NRND

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.25 A SOURCE AND 0.5 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP14 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHUTDOWN

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IR2112PBF

NRND

INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2112 Series

600 V High and Low Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOICWB.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2112PBF

Channel Type	Independent
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	14-DIP
Package Width	7.62 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2112 Series

Part	Gate Type	Package Name	Input Type	Package Length	Package Width	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIH	Logic Voltage - VIL	High Side Voltage - Max (Bootstrap)	Driven Configuration	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Package Leads	Package Features
INFINEON IR2112STR	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112S	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112SPBF
INFINEON IR2112SPBF	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112	IGBT MOSFET N-Channel MOSFET	14-DIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole
INFINEON IR2112-2PBF	IGBT MOSFET N-Channel MOSFET	16-DIP (0.300" 7.62mm) 16-PDIP	Non-Inverting			N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole	14 Leads
INFINEON IR2112PBF	IGBT MOSFET N-Channel MOSFET	14-DIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole
INFINEON IR2112STRPBF	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112-1	IGBT MOSFET N-Channel MOSFET	14-DIP 14-PDIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole		13 Leads
INFINEON IR2112-2	IGBT MOSFET N-Channel MOSFET	16-DIP (0.300" 7.62mm) 16-PDIP	Non-Inverting			N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole	14 Leads

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Application Note EN

Datasheet