IR2112 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HI/LOW SIDE 16SOIC

Part	Gate Type	Package Name	Input Type	Package Length	Package Width	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIH	Logic Voltage - VIL	High Side Voltage - Max (Bootstrap)	Driven Configuration	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Package Leads	Package Features
INFINEON IR2112STR	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112S	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112SPBF
INFINEON IR2112SPBF	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112	IGBT MOSFET N-Channel MOSFET	14-DIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole
INFINEON IR2112-2PBF	IGBT MOSFET N-Channel MOSFET	16-DIP (0.300" 7.62mm) 16-PDIP	Non-Inverting			N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole	14 Leads
INFINEON IR2112PBF	IGBT MOSFET N-Channel MOSFET	14-DIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole
INFINEON IR2112STRPBF	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112-1	IGBT MOSFET N-Channel MOSFET	14-DIP 14-PDIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole		13 Leads
INFINEON IR2112-2	IGBT MOSFET N-Channel MOSFET	16-DIP (0.300" 7.62mm) 16-PDIP	Non-Inverting			N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole	14 Leads