IR2112SPBF

Obsolete

INFINEON

THE IR2112S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOICWB PACKAGE)

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IR2112SPBF

Obsolete

INFINEON

THE IR2112S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (16 LEAD SOICWB PACKAGE)

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2112 Series

EiceDRIVER™ 600 Vhigh and low-sidegate driver ICwith typical 0.25 A source and 0.5 A sink currents in 16 Lead SOICWB package forIGBTsandMOSFETs. Also available in 14 Lead PDIP.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2112SPBF

Channel Type	Independent
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	40 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.295 in
Package Name	16-SOIC
Package Width	7.5 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2112 Series

Part	Gate Type	Package Name	Input Type	Package Length	Package Width	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Logic Voltage - VIH	Logic Voltage - VIL	High Side Voltage - Max (Bootstrap)	Driven Configuration	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Package Leads	Package Features
INFINEON IR2112STR	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112S	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112SPBF
INFINEON IR2112SPBF	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112	IGBT MOSFET N-Channel MOSFET	14-DIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole
INFINEON IR2112-2PBF	IGBT MOSFET N-Channel MOSFET	16-DIP (0.300" 7.62mm) 16-PDIP	Non-Inverting			N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole	14 Leads
INFINEON IR2112PBF	IGBT MOSFET N-Channel MOSFET	14-DIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole
INFINEON IR2112STRPBF	IGBT MOSFET N-Channel MOSFET	16-SOIC	Non-Inverting	0.295 in	7.5 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Surface Mount
INFINEON IR2112-1	IGBT MOSFET N-Channel MOSFET	14-DIP 14-PDIP	Non-Inverting	0.3 in	7.62 mm	N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole		13 Leads
INFINEON IR2112-2	IGBT MOSFET N-Channel MOSFET	16-DIP (0.300" 7.62mm) 16-PDIP	Non-Inverting			N-Channel	40 ns	80 ns	500 mA	250 mA	9.5 V	6 V	600 V	High-Side Low-Side	Independent	-40 °C	150 °C	2	10 VDC	20 V	Through Hole	14 Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet