
EV1HMC349AMS8G
ActiveBOARD EVALUATION HMC349AMS8G

EV1HMC349AMS8G
ActiveBOARD EVALUATION HMC349AMS8G
Description
General part information
HMC349 Series
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment
Technical Specifications
Parameters and characteristics for this part
| Specification | EV1HMC349AMS8G |
|---|---|
| Contents | Board |
| For Use With/Related Products | HMC349AMS8G |
| Frequency (Max) | 4 GHz |
| Frequency (Min) | 0 Hz |
| Supplied Contents | Board(s) |
| Type | Switch, SPDT |
| Utilized IC / Part | HMC349AMS8G |
Pricing
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