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HMC349AMS8GE

HMC349AMS8GE

Active
Analog Devices Inc./Maxim Integrated

HIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ

HMC349AMS8GE

HMC349AMS8GE

Active
Analog Devices Inc./Maxim Integrated

HIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ

Description

General part information

HMC349 Series

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC349AMS8GE
CircuitSPDT
Frequency Range (Max)4 GHz
Frequency Range (Min)0 Hz
IIP353 dBm
Impedance50 Ohm
Insertion Loss1.2 dB
Isolation50 dB
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
P1dB34 dBm
Package FeaturesExposed Pad
Package Length0.118 in
Package Name8-MSOP, 8-TSSOP, 8-MSOP-EP
Package Width3 mm
RF TypeGeneral Purpose
Test Frequency3 GHz
Voltage - Supply5 VDC

Pricing

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CAD

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Documents

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    HMC349AMS8GE | Analog Devices Inc./Maxim Integrated | Zenode.ai