
HMC349AMS8GETR
ActiveHIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ

HMC349AMS8GETR
ActiveHIGH ISOLATION, NONREFLECTIVE, GAAS, SPDT SWITCH,100 MHZ TO 4 GHZ
Description
General part information
HMC349 Series
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC349AMS8GETR |
|---|---|
| Circuit | SPDT |
| Frequency Range (Max) | 4 GHz |
| Frequency Range (Min) | 0 Hz |
| IIP3 | 53 dBm |
| Impedance | 50 Ohm |
| Insertion Loss | 1.2 dB |
| Isolation | 50 dB |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| P1dB | 34 dBm |
| Package Features | Exposed Pad |
| Package Length | 0.118 in |
| Package Name | 8-MSOP, 8-TSSOP, 8-MSOP-EP |
| Package Width | 3 mm |
| RF Type | General Purpose |
| Test Frequency | 3 GHz |
| Voltage - Supply | 5 VDC |
Pricing
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