IR2108STRPBF

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EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SHOOT THROUGH PROTECTION

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IR2108STRPBF

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2108 Series

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the new version with ourSOI technologywe recommend2ED2108S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IR2108STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	150 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2108 Series

Part	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Mounting Type	High Side Voltage - Max (Bootstrap)	Channel Type	Number of Drivers	Package Length	Package Name	Package Width	Driven Configuration	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Logic Voltage - VIL	Logic Voltage - VIH	Input Type
INFINEON IR2108	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Through Hole	600 V	Independent	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108PBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Through Hole	600 V	Independent	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108SPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108STRPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108STR	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108S	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting

Pricing

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CAD

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Documents

Technical documentation and resources

Datasheet