Specification	IR2108

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-DIP, 8-PDIP
Package Width	7.62 mm
Rise Time (Typ)	150 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2108 Series

Part	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Mounting Type	High Side Voltage - Max (Bootstrap)	Channel Type	Number of Drivers	Package Length	Package Name	Package Width	Driven Configuration	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Logic Voltage - VIL	Logic Voltage - VIH	Input Type
INFINEON IR2108	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Through Hole	600 V	Independent	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108PBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Through Hole	600 V	Independent	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108SPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108STRPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108STR	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108S	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting

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