IR2108 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Mounting Type	High Side Voltage - Max (Bootstrap)	Channel Type	Number of Drivers	Package Length	Package Name	Package Width	Driven Configuration	Gate Channel	Fall Time (Typ)	Rise Time (Typ)	Logic Voltage - VIL	Logic Voltage - VIH	Input Type
INFINEON IR2108	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Through Hole	600 V	Independent	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108PBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Through Hole	600 V	Independent	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108SPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108STRPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108STR	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting
INFINEON IR2108S	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	10 VDC	20 V	200 mA	0.35 A	Surface Mount	600 V	Independent	2	0.154 in	8-SOIC	3.9 mm	Half-Bridge	N-Channel	50 ns	150 ns	0.8 V	2.9 V	Non-Inverting