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TO-236AB
Discrete Semiconductor Products

PDTC123ETVL

Active
Nexperia USA Inc.

TRANS PREBIAS NPN TO236AB

TO-236AB
Discrete Semiconductor Products

PDTC123ETVL

Active
Nexperia USA Inc.

TRANS PREBIAS NPN TO236AB

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTC123ETVL
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)30
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
QualificationAEC-Q100
Resistor - Base (R1) Resistance2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Transistor TypePre-Biased, NPN
Vce Saturation (Max)150 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 10000$ 0.0230d+
30000$ 0.02
50000$ 0.01
100000$ 0.01
250000$ 0.01

CAD

3D models and CAD resources for this part

Description

General part information

PDTC123 Series

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

Documents

Technical documentation and resources