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SOT883B
Discrete Semiconductor Products

PDTC123TMB,315

Active
Nexperia USA Inc.

NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = OPEN

SOT883B
Discrete Semiconductor Products

PDTC123TMB,315

Active
Nexperia USA Inc.

NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = OPEN

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTC123TMB,315
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)30
Frequency - Transition230 MHz
GradeAutomotive
Mounting TypeSurface Mount
Package / Case3-XFDFN
Package NameDFN1006B-3
Power - Max250 mW
QualificationAEC-Q100
Resistor - Base (R1) Resistance2.2 kOhm
Transistor TypePre-Biased, NPN
Vce Saturation (Max)150 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 10000$ 0.0330d+
30000$ 0.03
50000$ 0.03
100000$ 0.03
250000$ 0.03

CAD

3D models and CAD resources for this part

Description

General part information

PDTC123 Series

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.