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SOT-236AB
Discrete Semiconductor Products

PDTC123EU,115

Active
Nexperia USA Inc.

50 V, 100 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = 2.2 KΩ

SOT-236AB
Discrete Semiconductor Products

PDTC123EU,115

Active
Nexperia USA Inc.

50 V, 100 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = 2.2 KΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTC123EU,115
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)30
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Package NameSOT-323
Power - Max200 mW
QualificationAEC-Q100
Resistor - Base (R1) Resistance2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Transistor TypePre-Biased, NPN
Vce Saturation (Max)150 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.1630d+
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Digi-Reel® 1$ 0.1630d+
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
Tape & Reel (TR) 3000$ 0.0330d+
6000$ 0.03
9000$ 0.03
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02

CAD

3D models and CAD resources for this part

Description

General part information

PDTC123 Series

100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.