CSD25304W1015
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET SINGLE WLP 1 MM X 1.5 MM, 32.5 MOHM
CSD25304W1015
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET SINGLE WLP 1 MM X 1.5 MM, 32.5 MOHM
Description
General part information
CSD25304W1015 Series
This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD25304W1015 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 4.4 nC |
| Input Capacitance (Ciss) (Max) | 595 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UFBGA, DSBGA |
| Package Length | 1 mm |
| Package Name | 6-DSBGA |
| Package Width | 1.5 mm |
| Power Dissipation (Max) | 750 mW |
| Rds On (Max) | 32.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.15 V |
Pricing
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