CSD25304W1015 Series
Manufacturer: Texas Instruments
Beta
⌘K
-20-V, P CHANNEL NEXFET™ POWER MOSFET SINGLE WLP 1 MM X 1.5 MM, 32.5 MOHM
| Part | Package Name | Package Width | Package Length | Mounting Type | FET Type | Vgs(th) (Max) | Power Dissipation (Max) | Technology | Vgs (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 6-DSBGA | 1.5 mm | 1 mm | Surface Mount | P-Channel | 1.15 V | 750 mW | MOSFET (Metal Oxide) | 8 V | 32.5 mOhm | 3 A | -55 °C | 150 °C | 595 pF | 20 V | 4.5 V | 1.8 V | 6-UFBGA DSBGA | 4.4 nC |
Texas Instruments | 6-DSBGA | 1.5 mm | 1 mm | Surface Mount | P-Channel | 1.15 V | 750 mW | MOSFET (Metal Oxide) | 8 V | 32.5 mOhm | 3 A | -55 °C | 150 °C | 595 pF | 20 V | 4.5 V | 1.8 V | 6-UFBGA DSBGA | 4.4 nC |