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TLP785F(D4-LF7,F - 4-SMD

TLP785F(D4-LF7,F

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Toshiba Semiconductor and Storage

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TLP785F(D4-LF7,F - 4-SMD

TLP785F(D4-LF7,F

Active
Toshiba Semiconductor and Storage

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Technical Specifications

Parameters and characteristics for this part

SpecificationTLP785F(D4-LF7,F
Current - DC Forward (If) (Max) [Max]60 mA
Current - Output / Channel50 mA
Current Transfer Ratio (Max) [Max]600 %
Current Transfer Ratio (Min) [Min]50 %
Input TypeDC
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature [Max]110 °C
Operating Temperature [Min]-55 °C
Output Type1.81 mOhm
Package / Case4-SMD, Gull Wing
Rise / Fall Time (Typ) [custom]3 µs
Rise / Fall Time (Typ) [custom]2 µs
Supplier Device Package4-SMD
Turn On / Turn Off Time (Typ)3 µs
Vce Saturation (Max) [Max]400 mV
Voltage - Forward (Vf) (Typ)1.15 V

TLP785 Series

PartOperating Temperature [Min]Operating Temperature [Max]Turn On / Turn Off Time (Typ)Vce Saturation (Max) [Max]Voltage - Forward (Vf) (Typ)Current - Output / ChannelMounting TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Input TypeNumber of ChannelsCurrent Transfer Ratio (Max) [Max]Output TypeSupplier Device PackagePackage / CaseCurrent Transfer Ratio (Min) [Min]Current - DC Forward (If) (Max) [Max]Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Surface Mount
3 µs
2 µs
DC
1
600 %
1.81 mOhm
4-SMD
4-SMD
Gull Wing
100 %
60 mA
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Surface Mount
3 µs
2 µs
DC
1
1.81 mOhm
4-SMD
4-SMD
Gull Wing
200 %
60 mA
400 %
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Through Hole
3 µs
2 µs
DC
1
600 %
1.81 mOhm
4-DIP
4-DIP (0.300"
7.62mm)
100 %
60 mA
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Through Hole
3 µs
2 µs
DC
1
1.81 mOhm
4-DIP
4-DIP
100 %
60 mA
300 %
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Through Hole
3 µs
2 µs
DC
1
600 %
1.81 mOhm
4-DIP
4-DIP
50 %
60 mA
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Through Hole
3 µs
2 µs
DC
1
1.81 mOhm
4-DIP
4-DIP (0.300"
7.62mm)
50 %
60 mA
150 %
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Through Hole
3 µs
2 µs
DC
1
600 %
1.81 mOhm
4-DIP
4-DIP (0.300"
7.62mm)
200 %
60 mA
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Through Hole
3 µs
2 µs
DC
1
1.81 mOhm
4-DIP
4-DIP (0.300"
7.62mm)
150 %
60 mA
300 %
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Surface Mount
3 µs
2 µs
DC
1
600 %
1.81 mOhm
4-SMD
4-SMD
Gull Wing
50 %
60 mA
Toshiba Semiconductor and Storage
-55 °C
110 °C
3 µs
400 mV
1.15 V
50 mA
Surface Mount
3 µs
2 µs
DC
1
1.81 mOhm
4-SMD
4-SMD
Gull Wing
100 %
60 mA
200 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

TLP785 Series

Optoisolator Transistor Output 5000Vrms 1 Channel 4-SMD

Documents

Technical documentation and resources