TLP785F(D4GRF7,F

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Toshiba Semiconductor and Storage

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TLP785F(D4GRF7,F

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Toshiba Semiconductor and Storage

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TLP785F(D4GRF7,F

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	300 %
Current Transfer Ratio (Min) [Min]	100 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	110 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-DIP
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	2 µs
Supplier Device Package	4-DIP
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V

TLP785 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Turn On / Turn Off Time (Typ)	Vce Saturation (Max) [Max]	Voltage - Forward (Vf) (Typ)	Current - Output / Channel	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Number of Channels	Current Transfer Ratio (Max) [Max]	Output Type	Supplier Device Package	Package / Case	Current Transfer Ratio (Min) [Min]	Current - DC Forward (If) (Max) [Max]	Current Transfer Ratio (Max)
Toshiba Semiconductor and Storage TLP785F(GB-LF7,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Surface Mount	3 µs	2 µs	DC	1	600 %	1.81 mOhm	4-SMD	4-SMD Gull Wing	100 %	60 mA
Toshiba Semiconductor and Storage TLP785(BLL-TP6,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Surface Mount	3 µs	2 µs	DC	1		1.81 mOhm	4-SMD	4-SMD Gull Wing	200 %	60 mA	400 %
Toshiba Semiconductor and Storage TLP785(D4-GB,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Through Hole	3 µs	2 µs	DC	1	600 %	1.81 mOhm	4-DIP	4-DIP (0.300" 7.62mm)	100 %	60 mA
Toshiba Semiconductor and Storage TLP785F(D4GRF7,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Through Hole	3 µs	2 µs	DC	1		1.81 mOhm	4-DIP	4-DIP	100 %	60 mA	300 %
Toshiba Semiconductor and Storage TLP785F(D4GHT7,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Through Hole	3 µs	2 µs	DC	1	600 %	1.81 mOhm	4-DIP	4-DIP	50 %	60 mA
Toshiba Semiconductor and Storage TLP785(D4-Y,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Through Hole	3 µs	2 µs	DC	1		1.81 mOhm	4-DIP	4-DIP (0.300" 7.62mm)	50 %	60 mA	150 %
Toshiba Semiconductor and Storage TLP785(D4-BL,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Through Hole	3 µs	2 µs	DC	1	600 %	1.81 mOhm	4-DIP	4-DIP (0.300" 7.62mm)	200 %	60 mA
Toshiba Semiconductor and Storage TLP785(D4-GRH,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Through Hole	3 µs	2 µs	DC	1		1.81 mOhm	4-DIP	4-DIP (0.300" 7.62mm)	150 %	60 mA	300 %
Toshiba Semiconductor and Storage TLP785F(D4-LF7,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Surface Mount	3 µs	2 µs	DC	1	600 %	1.81 mOhm	4-SMD	4-SMD Gull Wing	50 %	60 mA
Toshiba Semiconductor and Storage TLP785(GRL-TP6,F	-55 °C	110 °C	3 µs	400 mV	1.15 V	50 mA	Surface Mount	3 µs	2 µs	DC	1		1.81 mOhm	4-SMD	4-SMD Gull Wing	100 %	60 mA	200 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

TLP785 Series

Optoisolator Transistor Output 5000Vrms 1 Channel 4-DIP

Documents

Technical documentation and resources