TLP785 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

PHOTOCOUPLER TRANS OUT

Part	Package Name	Mounting Type	Voltage - Isolation	Package / Case	Voltage - Output (Max)	Number of Channels	Current - DC Forward (If) (Max)	Rise Time (Typ)	Fall Time (Typ)	Output Type	Input Type	Voltage - Forward (Vf) (Typ)	Turn On Time (Typ)	Turn Off Time (Typ)	Current Transfer Ratio (Max)	Vce Saturation (Max)	Operating Temperature (Max)	Operating Temperature (Min)	Current Transfer Ratio (Min)	Current - Output / Channel	Package Width	Package Length
Toshiba Semiconductor and Storage TLP785F(GB-LF7,F	4-SMD	Surface Mount	5000 Vrms	4-SMD Gull Wing	80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	600 %	400 mV	110 °C	-55 °C	100 %	50 mA
Toshiba Semiconductor and Storage TLP785F(GR-TP7,F	4-SMD	Surface Mount	5000 Vrms	4-SMD Gull Wing	80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	300 %	400 mV	110 °C	-55 °C	100 %	50 mA
Toshiba Semiconductor and Storage TLP785(BLL-TP6,F	4-SMD	Surface Mount	5000 Vrms	4-SMD Gull Wing	80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	400 %	400 mV	110 °C	-55 °C	200 %	50 mA
Toshiba Semiconductor and Storage TLP785(D4-GB,F	4-DIP	Through Hole	5000 Vrms		80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	600 %	400 mV	110 °C	-55 °C	100 %	50 mA	7.62 mm	0.3 in
Toshiba Semiconductor and Storage TLP785F(D4GRF7,F	4-DIP	Through Hole	5000 Vrms		80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	300 %	400 mV	110 °C	-55 °C	100 %	50 mA	10.16 mm	10.16 mm
Toshiba Semiconductor and Storage TLP785(LF6,F	4-DIP	Through Hole	5000 Vrms		80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	600 %	400 mV	110 °C	-55 °C	50 %	50 mA	7.62 mm	0.3 in
Toshiba Semiconductor and Storage TLP785(BL,F			5000 Vrms		80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	600 %	400 mV	110 °C	-55 °C	200 %	50 mA
Toshiba Semiconductor and Storage TLP785F(D4GHT7,F	4-DIP	Through Hole	5000 Vrms		80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	600 %	400 mV	110 °C	-55 °C	50 %	50 mA	10.16 mm	10.16 mm
Toshiba Semiconductor and Storage TLP785(D4-Y,F	4-DIP	Through Hole	5000 Vrms		80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	150 %	400 mV	110 °C	-55 °C	50 %	50 mA	7.62 mm	0.3 in
Toshiba Semiconductor and Storage TLP785(GRH-LF6,F	4-DIP	Through Hole	5000 Vrms		80 V	1	60 mA	2 µs	3 µs	Transistor	DC	1.15 V	3 µs	3 µs	300 %	400 mV	110 °C	-55 °C	150 %	50 mA	7.62 mm	0.3 in