TLP785 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
PHOTOCOUPLER TRANS OUT
| Part | Package Name | Mounting Type | Voltage - Isolation | Package / Case | Voltage - Output (Max) | Number of Channels | Current - DC Forward (If) (Max) | Rise Time (Typ) | Fall Time (Typ) | Output Type | Input Type | Voltage - Forward (Vf) (Typ) | Turn On Time (Typ) | Turn Off Time (Typ) | Current Transfer Ratio (Max) | Vce Saturation (Max) | Operating Temperature (Max) | Operating Temperature (Min) | Current Transfer Ratio (Min) | Current - Output / Channel | Package Width | Package Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4-SMD | Surface Mount | 5000 Vrms | 4-SMD Gull Wing | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 600 % | 400 mV | 110 °C | -55 °C | 100 % | 50 mA | ||
 Toshiba Semiconductor and Storage | 4-SMD | Surface Mount | 5000 Vrms | 4-SMD Gull Wing | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 300 % | 400 mV | 110 °C | -55 °C | 100 % | 50 mA | ||
Toshiba Semiconductor and Storage | 4-SMD | Surface Mount | 5000 Vrms | 4-SMD Gull Wing | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 400 % | 400 mV | 110 °C | -55 °C | 200 % | 50 mA | ||
Toshiba Semiconductor and Storage | 4-DIP | Through Hole | 5000 Vrms | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 600 % | 400 mV | 110 °C | -55 °C | 100 % | 50 mA | 7.62 mm | 0.3 in | |
 Toshiba Semiconductor and Storage | 4-DIP | Through Hole | 5000 Vrms | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 300 % | 400 mV | 110 °C | -55 °C | 100 % | 50 mA | 10.16 mm | 10.16 mm | |
 Toshiba Semiconductor and Storage | 4-DIP | Through Hole | 5000 Vrms | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 600 % | 400 mV | 110 °C | -55 °C | 50 % | 50 mA | 7.62 mm | 0.3 in | |
Toshiba Semiconductor and Storage | 5000 Vrms | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 600 % | 400 mV | 110 °C | -55 °C | 200 % | 50 mA | |||||
Toshiba Semiconductor and Storage | 4-DIP | Through Hole | 5000 Vrms | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 600 % | 400 mV | 110 °C | -55 °C | 50 % | 50 mA | 10.16 mm | 10.16 mm | |
 Toshiba Semiconductor and Storage | 4-DIP | Through Hole | 5000 Vrms | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 150 % | 400 mV | 110 °C | -55 °C | 50 % | 50 mA | 7.62 mm | 0.3 in | |
Toshiba Semiconductor and Storage | 4-DIP | Through Hole | 5000 Vrms | 80 V | 1 | 60 mA | 2 µs | 3 µs | Transistor | DC | 1.15 V | 3 µs | 3 µs | 300 % | 400 mV | 110 °C | -55 °C | 150 % | 50 mA | 7.62 mm | 0.3 in |