CSD17483F4T
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6 MM, 260 MOHM, GATE ESD PROTECTION
CSD17483F4T
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6 MM, 260 MOHM, GATE ESD PROTECTION
Description
General part information
CSD17483F4 Series
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD17483F4T |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.3 nC |
| Input Capacitance (Ciss) (Max) | 190 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 3-XFDFN |
| Package Name | 3-PICOSTAR |
| Power Dissipation (Max) | 500 mW |
| Rds On (Max) | 240 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.1 V |
Pricing
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