CSD17483F4 Series

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Part	Package / Case	Technology	Package Name	Vgs(th) (Max)	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Vgs (Max)	Rds On (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)
Texas Instruments CSD17483F4T	3-XFDFN	MOSFET (Metal Oxide)	3-PICOSTAR	1.1 V	Surface Mount	1.3 nC	-55 °C	150 °C	1.5 A	4.5 V	1.8 V	N-Channel	12 V	240 mOhm	500 mW	190 pF	30 V
Texas Instruments CSD17483F4	3-XFDFN	MOSFET (Metal Oxide)	3-PICOSTAR	1.1 V	Surface Mount	1.3 nC	-55 °C	150 °C	1.5 A	4.5 V	1.8 V	N-Channel	12 V	240 mOhm	500 mW	190 pF	30 V

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Description

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.