
2N6661-2
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 90V 860MA TO39
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2N6661-2
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 90V 860MA TO39
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6661-2 | 
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 860 mA | 
| Drain to Source Voltage (Vdss) | 90 V | 
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V | 
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V | 
| FET Type | N-Channel | 
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF | 
| Mounting Type | Through Hole | 
| Operating Temperature [Max] | 150 °C | 
| Operating Temperature [Min] | -55 °C | 
| Package / Case | TO-39-3 Metal Can, TO-205AD | 
| Power Dissipation (Max) | 6.25 W, 725 mW | 
| Rds On (Max) @ Id, Vgs | 4 Ohm | 
| Supplier Device Package | TO-39 | 
| Technology | MOSFET (Metal Oxide) | 
| Vgs (Max) | 20 V | 
| Vgs(th) (Max) @ Id | 2 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2N6661 Series
N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
Documents
Technical documentation and resources