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2N6661JTXP02 - TO-39

2N6661JTXP02

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 90V 860MA TO39

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2N6661JTXP02 - TO-39

2N6661JTXP02

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 90V 860MA TO39

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2N6661JTXP02
Current - Continuous Drain (Id) @ 25°C860 mA
Drain to Source Voltage (Vdss)90 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Power Dissipation (Max)6.25 W, 725 mW
Rds On (Max) @ Id, Vgs4 Ohm
Supplier Device PackageTO-39
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

2N6661 Series

N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39

Documents

Technical documentation and resources