2N6661 Series

Catalog

MOSFET N-CH 90V 860MA TO39

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)
Vishay General Semiconductor - Diodes Division 2N6661-2	10 V	5 V	TO-205AD TO-39-3 Metal Can	Through Hole	TO-39	50 pF	-55 °C	150 °C	4 Ohm	2 V	MOSFET (Metal Oxide)	860 mA	N-Channel	90 V	6.25 W 725 mW	20 V
Vishay General Semiconductor - Diodes Division 2N6661-E3	10 V	5 V	TO-205AD TO-39-3 Metal Can	Through Hole	TO-39	50 pF	-55 °C	150 °C	4 Ohm	2 V	MOSFET (Metal Oxide)	860 mA	N-Channel	90 V	6.25 W 725 mW	20 V
Vishay General Semiconductor - Diodes Division 2N6661	10 V	5 V	TO-205AD TO-39-3 Metal Can	Through Hole	TO-39	50 pF	-55 °C	150 °C	4 Ohm	2 V	MOSFET (Metal Oxide)	860 mA	N-Channel	90 V	6.25 W 725 mW	20 V
Vishay General Semiconductor - Diodes Division 2N6661JTXP02	10 V	5 V	TO-205AD TO-39-3 Metal Can	Through Hole	TO-39	50 pF	-55 °C	150 °C	4 Ohm	2 V	MOSFET (Metal Oxide)	860 mA	N-Channel	90 V	6.25 W 725 mW	20 V