EPC2016

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Efficient Power Conversion Corporation

GANFET N-CH 100V 11A DIE

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EPC2016

Unknown

Efficient Power Conversion Corporation

GANFET N-CH 100V 11A DIE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2016

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	Die
Rds On (Max) @ Id, Vgs [Max]	16 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	2.5 V

EPC20 Series

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Efficient Power Conversion Corporation EPC2055	40 V	1111 pF	Surface Mount	3.6 mOhm	N-Channel	2.5 V	Die	8.5 nC	29 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C
Efficient Power Conversion Corporation EPC2007	100 V	205 pF	Surface Mount		N-Channel		Die	2.8 nC	6 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-5 V	125 ¯C	-40 °C	2.5 V
Efficient Power Conversion Corporation EPC2014C	40 V	300 pF	Surface Mount	16 mOhm	N-Channel	2.5 V	Die	2.5 nC	10 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C
Efficient Power Conversion Corporation EPC2051	100 V	258 pF	Surface Mount	25 mOhm	N-Channel	2.5 V	Die		1.7 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C		2.1 nC
Efficient Power Conversion Corporation EPC2029	80 V	1410 pF	Surface Mount	3.2 mOhm	N-Channel	2.5 V	Die		48 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C		13 nC
Efficient Power Conversion Corporation EPC2018	150 V	540 pF	Surface Mount	25 mOhm	N-Channel	2.5 V	Die		12 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-5 V	125 ¯C	-40 °C		7.5 nC
Efficient Power Conversion Corporation EPC2044	100 V	664 pF	Surface Mount		N-Channel	2.5 V	Die		9.4 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C			10.5 mOhm
Efficient Power Conversion Corporation EPC2016	100 V		Surface Mount		N-Channel	2.5 V	Die		11 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-5 V	125 ¯C	-40 °C		5.2 nC	16 mOhm	520 pF
Efficient Power Conversion Corporation EPC2065	80 V		Surface Mount	3.6 mOhm	N-Channel	2.5 V	Die		60 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C		12.2 nC
Efficient Power Conversion Corporation EPC2040	15 V	105 pF	Surface Mount	30 mOhm	N-Channel		Die		3.4 A	GaNFET (Gallium Nitride)	5 V	Die			150 °C	-40 °C	2.5 V	0.93 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

EPC20 Series

N-Channel 100 V 11A (Ta) Surface Mount Die

Documents

Technical documentation and resources