EPC20 Series

Manufacturer: Efficient Power Conversion Corporation

Catalog

GANFET N-CH 40V 29A DIE

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Efficient Power Conversion Corporation EPC2055	40 V	1111 pF	Surface Mount	3.6 mOhm	N-Channel	2.5 V	Die	8.5 nC	29 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C
Efficient Power Conversion Corporation EPC2007	100 V	205 pF	Surface Mount		N-Channel		Die	2.8 nC	6 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-5 V	125 ¯C	-40 °C	2.5 V
Efficient Power Conversion Corporation EPC2014C	40 V	300 pF	Surface Mount	16 mOhm	N-Channel	2.5 V	Die	2.5 nC	10 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C
Efficient Power Conversion Corporation EPC2051	100 V	258 pF	Surface Mount	25 mOhm	N-Channel	2.5 V	Die		1.7 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C		2.1 nC
Efficient Power Conversion Corporation EPC2029	80 V	1410 pF	Surface Mount	3.2 mOhm	N-Channel	2.5 V	Die		48 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C		13 nC
Efficient Power Conversion Corporation EPC2018	150 V	540 pF	Surface Mount	25 mOhm	N-Channel	2.5 V	Die		12 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-5 V	125 ¯C	-40 °C		7.5 nC
Efficient Power Conversion Corporation EPC2044	100 V	664 pF	Surface Mount		N-Channel	2.5 V	Die		9.4 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C			10.5 mOhm
Efficient Power Conversion Corporation EPC2016	100 V		Surface Mount		N-Channel	2.5 V	Die		11 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-5 V	125 ¯C	-40 °C		5.2 nC	16 mOhm	520 pF
Efficient Power Conversion Corporation EPC2065	80 V		Surface Mount	3.6 mOhm	N-Channel	2.5 V	Die		60 A	GaNFET (Gallium Nitride)	5 V	Die	6 V	-4 V	150 °C	-40 °C		12.2 nC
Efficient Power Conversion Corporation EPC2040	15 V	105 pF	Surface Mount	30 mOhm	N-Channel		Die		3.4 A	GaNFET (Gallium Nitride)	5 V	Die			150 °C	-40 °C	2.5 V	0.93 nC