IR2106SPBF

Obsolete

INFINEON

DUAL DRIVER IC, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 350MA OUT, 200NS DELAY, SOIC-8

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IR2106SPBF

Obsolete

INFINEON

DUAL DRIVER IC, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 350MA OUT, 200NS DELAY, SOIC-8

Find alt

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2106 Series

EiceDRIVER™ 600 Vhigh and low-sidegate driver ICwith typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the newest version with ourSOI technologywe recommend2ED2106S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IR2106SPBF

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	150 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2106 Series

Part	Gate Type	Fall Time (Typ)	Rise Time (Typ)	Channel Type	Mounting Type	Gate Channel	Logic Voltage - VIL	Logic Voltage - VIH	High Side Voltage - Max (Bootstrap)	Package Length	Package Name	Package Width	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Type	Operating Temperature (Min)	Operating Temperature (Max)	Driven Configuration	Current - Peak Output (Source)	Current - Peak Output (Sink)
INFINEON IR2106	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Through Hole	N-Channel	0.8 V	2.9 V	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106SPBF	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106S	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106STRPBF	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106STR	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR2106SPBF | Datasheet