IR2106STRPBF

Active

INFINEON

GATE DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, MOSFET, 8 PINS, SOIC

Find alt

Alpha

IR2106STRPBF

Active

INFINEON

GATE DRIVER, 2 CHANNELS, HIGH SIDE AND LOW SIDE, MOSFET, 8 PINS, SOIC

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IR2106 Series

IR2106STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2106STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	150 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2106 Series

Part	Gate Type	Fall Time (Typ)	Rise Time (Typ)	Channel Type	Mounting Type	Gate Channel	Logic Voltage - VIL	Logic Voltage - VIH	High Side Voltage - Max (Bootstrap)	Package Length	Package Name	Package Width	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Type	Operating Temperature (Min)	Operating Temperature (Max)	Driven Configuration	Current - Peak Output (Source)	Current - Peak Output (Sink)
INFINEON IR2106	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Through Hole	N-Channel	0.8 V	2.9 V	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106SPBF	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106S	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106STRPBF	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106STR	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IR2106STRPBF | Datasheet