IR2106 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Gate Type	Fall Time (Typ)	Rise Time (Typ)	Channel Type	Mounting Type	Gate Channel	Logic Voltage - VIL	Logic Voltage - VIH	High Side Voltage - Max (Bootstrap)	Package Length	Package Name	Package Width	Number of Drivers	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Type	Operating Temperature (Min)	Operating Temperature (Max)	Driven Configuration	Current - Peak Output (Source)	Current - Peak Output (Sink)
INFINEON IR2106	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Through Hole	N-Channel	0.8 V	2.9 V	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106SPBF	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106S	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106STRPBF	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A
INFINEON IR2106STR	IGBT MOSFET N-Channel MOSFET	50 ns	150 ns	Independent	Surface Mount	N-Channel	0.8 V	2.9 V	600 V	0.154 in	8-SOIC	3.9 mm	2	10 VDC	20 V	Non-Inverting	-40 °C	150 °C	Half-Bridge	200 mA	0.35 A