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STF8NK100Z - TO-220FP

STF8NK100Z

Active
STMicroelectronics

N-CHANNEL 1000 V, 1.60 OHM TYP., 6.5 A SUPERMESH POWER MOSFET IN A TO-220FP PACKAGE

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Search across all available documentation for this part.

DocumentsTN1224AN4337+15
STF8NK100Z - TO-220FP

STF8NK100Z

Active
STMicroelectronics

N-CHANNEL 1000 V, 1.60 OHM TYP., 6.5 A SUPERMESH POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsTN1224AN4337+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF8NK100Z
Current - Continuous Drain (Id) @ 25°C6.5 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]102 nC
Input Capacitance (Ciss) (Max) @ Vds2180 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs1.85 Ohm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.76
50$ 3.77
100$ 3.23
500$ 2.87
1000$ 2.46
2000$ 2.32
NewarkEach 1$ 5.60
10$ 4.74
100$ 3.38
500$ 2.92
1000$ 2.82

Description

General part information

STF8NK100Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.