STF8NK100Z Series

N-channel 1000 V, 1.60 Ohm typ., 6.5 A SuperMESH Power MOSFET in a TO-220FP package

Catalog

N-channel 1000 V, 1.60 Ohm typ., 6.5 A SuperMESH Power MOSFET in a TO-220FP package

Part	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STF8N60DM2	MOSFET (Metal Oxide)	Through Hole	10 V	N-Channel	-55 °C	150 °C	25 W	TO-220-3 Full Pack	25 V	TO-220FPAB	13.5 nC	449 pF	600 V	8 A	5 V	600 mOhm
STMicroelectronics STF8NM50N	MOSFET (Metal Oxide)	Through Hole	10 V	N-Channel	-55 °C	150 °C	20 W	TO-220-3 Full Pack	25 V	TO-220FP	14 nC	364 pF	500 V	5 A	4 V	790 mOhm
STMicroelectronics STF8N65M5	MOSFET (Metal Oxide)	Through Hole	10 V	N-Channel			25 W	TO-220-3 Full Pack	25 V	TO-220FP		690 pF	650 V	7 A	5 V	600 mOhm	150 °C
STMicroelectronics STF8NK100Z	MOSFET (Metal Oxide)	Through Hole	10 V	N-Channel	-55 °C	150 °C	40 W	TO-220-3 Full Pack	30 V	TO-220FP		2180 pF	1000 V	6.5 A	4.5 V	1.85 Ohm		102 nC

Catalog

N-channel 1000 V, 1.60 Ohm typ., 6.5 A SuperMESH Power MOSFET in a TO-220FP package

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.