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STF8N60DM2 - TO-220FP

STF8N60DM2

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STMicroelectronics

MOSFET N-CH 600V 8A TO220FP

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STF8N60DM2 - TO-220FP

STF8N60DM2

Active
STMicroelectronics

MOSFET N-CH 600V 8A TO220FP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF8N60DM2
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.5 nC
Input Capacitance (Ciss) (Max) @ Vds449 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)25 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageTO-220FPAB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

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Description

General part information

STF8NK100Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

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Technical documentation and resources