
STF8N60DM2
ActiveMOSFET N-CH 600V 8A TO220FP
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STF8N60DM2
ActiveMOSFET N-CH 600V 8A TO220FP
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Technical Specifications
Parameters and characteristics for this part
| Specification | STF8N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 449 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | TO-220FPAB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STF8NK100Z Series
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Documents
Technical documentation and resources